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10 months, 4 weeks agoWe unlock GaN-on-Silicon technology
EasyGaN is a startup providing epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop advanced substrates for the GaN on Silicon semiconductor market using Molecular Beam Epitaxy (MBE). Our first product is a very thin high-quality Aluminium Nitride (AlN) layer grown on top of a silicon wafer. This so-called ''AlN template'' is already available and is currently being tested by customers as ideal starting point for their GaN epitaxy. In addition, we are currently developing an ultra-thin GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave device market.
III-V Epitaxy, MBE, and GaN-on-Si
We unlock GaN-on-Silicon technology
EasyGaN is a startup providing epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop advanced substrates for the GaN on Silicon semiconductor market using Molecular Beam Epitaxy (MBE). Our first product is a very thin high-quality Aluminium Nitride (AlN) layer grown on top of a silicon wafer. This so-called ''AlN template'' is already available and is currently being tested by customers as ideal starting point for their GaN epitaxy. In addition, we are currently developing an ultra-thin GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave device market.
EasyGaN is a GaN-on-Silicon epivendor. We develop advanced epiwafers for the GaN-on-Si semiconductor market using Molecular Beam Epitaxy (MBE).
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