Entity
  • EasyGaN

    Created in 2017
  • BETA

    Up & running (A)
    Existing signals show a regular activity
  • Social networks

    784
  • Activities

  • Technologies

  • Entity types

  • Location

    Rue Bernard Grégory, 06560 Valbonne, France

    Valbonne

    France

  • Employees

    Scale: 2-10

    Estimated: 6

  • SIREN

    824697718
  • Engaged corporates

    3
    1 2
  • Added in Motherbase

    10 months, 4 weeks ago
Description
  • Value proposition

    We unlock GaN-on-Silicon technology

    EasyGaN is a startup providing epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop advanced substrates for the GaN on Silicon semiconductor market using Molecular Beam Epitaxy (MBE). Our first product is a very thin high-quality Aluminium Nitride (AlN) layer grown on top of a silicon wafer. This so-called ''AlN template'' is already available and is currently being tested by customers as ideal starting point for their GaN epitaxy. In addition, we are currently developing an ultra-thin GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave device market.

    III-V Epitaxy, MBE, and GaN-on-Si

  • Original language

    We unlock GaN-on-Silicon technology

    EasyGaN is a startup providing epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop advanced substrates for the GaN on Silicon semiconductor market using Molecular Beam Epitaxy (MBE). Our first product is a very thin high-quality Aluminium Nitride (AlN) layer grown on top of a silicon wafer. This so-called ''AlN template'' is already available and is currently being tested by customers as ideal starting point for their GaN epitaxy. In addition, we are currently developing an ultra-thin GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave device market.

  • EasyGaN | GaN on Silicon epivendor

    EasyGaN is a GaN-on-Silicon epivendor. We develop advanced epiwafers for the GaN-on-Si semiconductor market using Molecular Beam Epitaxy (MBE).

  • https://www.easy-gan.com/
Corporate interactions BETA
Corporate TypeTweets Articles
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Secured Communicating Solutions (SCS) CLUSTER
Secured Communicating Solutions (SCS) CLUSTER
Public business cluster, French Cluster, IT Services and IT Consulting
Secured Communicating Solutions (SCS) CLUSTER
Public business cluster, French Cluster, IT Services and IT Consulting
Other

12 May 2024


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